journal article·2019-08-09

Erratum: Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies (2019 Nanotechnology 30 154002)

M Sobanska, Z R Zytkiewicz, G Calabrese, L Geelhaar, S Fernández-Garrido

Nanotechnology· Volume 30· Issue 32
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Abstract

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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

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