article·2011-10-25

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires | NIST

Aric W. Sanders, Paul T. Blanchard, Kristine A. Bertness, Matthew D. Brubaker, Ann C. Chiaramonti Debay, Christopher M. Dodson, Todd E. Harvey, Andrew M. Herrero, Devin M. Rourke, John B. Schlager, Norman A. Sanford, Albert Davydov, Abhishek Motayed, D. Tsvetkov

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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Semiconductor materials and devices

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