journal article·2001-12-01

Time constant of the far-IR response of a quantum Hall device

I V Erofeeva, V I Gavrilenko, S Komiyama

Nanotechnology· Volume 12· Issue 4
Publisher page

Abstract

The characteristic time of far IR response of quantum Hall effect detector in GaA/AlGaAs has been investigated versus the magnetic field. The response time is shown to increase dramatically with the field due to the spatial separation of photoexcited electrons and holes captured by localized states formed by the disordered potential.
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Research context

OpenAlex topics: Quantum and electron transport phenomena · Magnetic Field Sensors Techniques · Topological Materials and Phenomena

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