Gate-controlled rectifying barrier in a two-dimensional hole gas
Source abstract
Abstract
The current flowing in a homogeneous low-dimensional conductor is shown to be rectified by a gate-controlled asymmetric barrier resembling a Schottky barrier. The barrier shape is set by varying the potential along a nanofabricated nonequipotential gate which allows simple external control over the device function independent of material properties. A forward-to-reverse current ratio of more than 10(4) is obtained. The merits of diodes fabricated in this way with respect to conventional diodes are discussed.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
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