Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure usingC-Vprofiling

M F Kokorev; N A Maleev; D V Pakhnin; A E Zhukov; V M Ustinov

doi:10.1088/0957-4484/12/4/324

journal article·2001-12-01

Computational and experimental studies on strain-induced effects in a InGaAs/GaAs HFET structure usingC-Vprofiling

M F Kokorev, N A Maleev, D V Pakhnin, A E Zhukov, V M Ustinov

Nanotechnology· Volume 12· Issue 4

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Abstract

We analyse strain-induced effects on the capacitance-voltage (C-V) profile for an MBE-grown GaAs/In0.1Ga0.9As/GaAs HFET structure. The calculations of C-V profile were made using a new small-signal approach developed for the quantum well (QW) structures. The self-consistent numerical simulations and results of measurements show that strain causes significant changes in the electron distribution of the QW structure and its C-V profile.

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OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices

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