Comment on ‘Electron–phonon scattering in Sn-doped In₂O₃FET nanowires probed by temperature-dependent measurements’

Juhn-Jong Lin; Chih-Yuan Wu

doi:10.1088/0957-4484/20/46/468001

journal article·2009-11-18

Comment on ‘Electron–phonon scattering in Sn-doped In₂O₃FET nanowires probed by temperature-dependent measurements’

Juhn-Jong Lin, Chih-Yuan Wu

Nanotechnology· Volume 20· Issue 46

Publisher page

Source abstract

Abstract

We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.

Only a short abstract or summary was supplied by the source.

Source: openalex_inverted_index · Quality: short

Research context

Nanomaterials

OpenAlex topics: Gas Sensing Nanomaterials and Sensors · Nanowire Synthesis and Applications · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (5)

Show source-provided references

1. Berengue O M · Nanotechnology · 2009 · 20 · 24570610.1088/0957-4484/20/24/245706 ↗

2. Kittel C · Introduction to Solid State Physics · 2005

3. 10.1021/nl062213d10.1021/nl062213d ↗

4. 10.1063/1.180115310.1063/1.1801153 ↗

5. Chiu S P · Nanotechnology · 2009 · 20 · 10520310.1088/0957-4484/20/10/105203 ↗