Low-temperature electron mobility in Ga_{0.5}In_{0.5}P/GaAs quantum wells

B R Nag; Madhumita Das

doi:10.1088/0957-4484/14/9/305

journal article·2003-09-01

Low-temperature electron mobility in Ga_0.5In_0.5P/GaAs quantum wells

B R Nag, Madhumita Das

Nanotechnology· Volume 14· Issue 9

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Abstract

The electron mobility is calculated for Ga0.5In0.5P/GaAs quantum wells at 77 K. Deformation potential acoustic phonon and alloy scattering are assumed to be effective. Account has been taken of the energy band nonparabolicity and extension of the wavefunction into the Ga0.5In0.5P barrier layer. Calculated results for Al0.3Ga0.7As/GaAs quantum wells are also presented for comparison.

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Research context

Metals & alloys

OpenAlex topics: Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design · Quantum and electron transport phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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