Magnetic Domain Wall Logic

Abstract Magnetic domain wall logic technology is based upon controlling the magnetization processes in ferromagnetic nanowire circuits. Opposite magnetization directions in the nanowires are used to denote logical “1” and “0”. Switching between these two states is achieved by using applied magnetic fields to propagate magnetic domain walls through the nanowires. Nanowire junctions are used to perform various operations, including logical NOT, logical AND, signal fan‐out and signal cross‐over. A suitable combination of these structures in a digital circuit allows any computation to be performed. Data writing and erasing can also achieved by using additional circuit features and control of the applied magnetic field. To illustrate the potential use of magnetic domain wall logic, a shift register with continuous data recirculation is presented. Finally, the future potential of this nascent technology is discussed, with particular emphasis on non‐volatile serial data storage.