Quantum confinement in silicon-germanium electron waveguides
Source abstract
Abstract
We have simulated the electronic properties of silicon-germanium electron waveguides defined by selective etching on a SiGe heterostructure. In particular, we have investigated the dependence of quantum confinement and of one-dimensional subband separation on the waveguide width. Indeed,
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Research context
OpenAlex topics: Photonic and Optical Devices · Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design
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