Memory Devices Based on Mass Transport in Solid Electrolytes

Abstract This chapter introduces the concept of low‐energy, non‐volatile memory devices based on mass transport in solid electrolytes. In these devices, information is stored as a change in resistance due to the formation of a metallic filament via the reduction of metal ions in the electrolyte. To show how such elements work, basic solid‐state electrochemistry and ion transport are described, along with the materials science of solid electrolytes, with particular emphasis being placed on the nanostructure of ternary ion conductors. The growth, morphology, and electrical characteristics of metal electrodeposits are discussed and related to both the nature of the materials involved and the operation of memory elements. The configuration and performance of a variety of devices are presented, including factors such as programming speed, endurance, and retention, as well as results that demonstrate physical and electrical scalability of the technology.