Abnormal temperature-dependent photoluminescence characteristics of ReS 2 nanowalls
Source abstract
Abstract
Abstract Two samples with [001] orientated rhenium disulfide (ReS 2 ) nanowalls (NWs) grown above and in front of precursor (NH 4 ReO 4 ) by chemical vapor deposition were investigated. The temperature-dependent photoluminescence (PL) indicated that the PL peak exhibited linear blue-shift at a rate of ∼0.24 meV K −1 with increasing the temperature from 10 to 300 K, while the linewidth monotonically increased due to the exciton–phonon interaction. This abnormal blue-shift of PL emission energy, which is explained by a competition between the band gap shrinkage and the energy level degeneracy with respect to the increase of temperature and lattice constant, enables ReS 2 NWs to possess great potential for development of thermal sensors. In addition, exciton localization effect in the ReS 2 NWs from abundant edges and weak interlayer interaction was also observed to be related to the height and density of ReS 2 NWs. These results not only enrich the understanding for exciton dynamics in ReS 2 NWs, but also help to exploit ReS 2 NWs for device applications.
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Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films
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References (44)
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