3D growth of silicon nanowires under pure hydrogen plasma at low temperature (250 °C)
Source abstract
Abstract
Abstract The synthesis of silicon nanowires (SiNWs) is carried out at 250 °C under pure hydrogen plasma from monocrsytalline silicon substrates or amorphous silicon thin film, using indium as a catalyst. Studies have been carried out in function of the duration of the hydrogen plasma. The results showed a growth of smooth surface nanowire arrays (diameter 100 nm, length 500 nm) from an indium thickness of 20 nm and a hydrogen plasma duration of 30 min. The growth of nanowires for longer hydrogen plasma durations has led to SiNWs with larger diameters and rougher surfaces, revealing the onset of secondary nanowire growth on these surfaces, probably due to the presence of indium residues. The results present a new procedure for the 3D solid liquid solid growth mode of SiNWs.
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Research context
OpenAlex topics: Nanowire Synthesis and Applications · Thin-Film Transistor Technologies · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (23)
Show source-provided references
1. Silicon nanowires: the key building block for future electronic devices10.1039/b709983e ↗
2. Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species10.1126/science.1062711 ↗
3. Top-down fabricated silicon nanowire sensors for real-time chemical detection10.1088/0957-4484/21/1/015501 ↗
4. Vapor–liquid–solid mechanism of single crystal growth10.1063/1.1753975 ↗
5. Au-catalyst silicon nanowires synthesized by vapor–liquid–solid technique in a V-shaped groove: application for gas sensors10.1166/sl.2013.2842 ↗
6. Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching10.1116/1.4755835 ↗
7. Initial nucleation and growth of in-plane solid–liquid–solid silicon nanowires catalyzed by indium10.1103/PhysRevB.80.085313 ↗
8. Metal-induced crystallization of amorphous silicon10.1016/S0040-6090(00)01790-9 ↗
9. Polycrystalline silicon films on glass grown by amorphous-liquid-crystalline transition at temperatures below 330 °C10.1016/j.tsf.2011.08.084 ↗
10. Ultrathin quantum dot display integrated with wearable electronics10.1002/adma.201700217 ↗
11. Flexible and stretchable smart display: materials, fabrication, device design, and system integration10.1002/adfm.201801834 ↗
12. Wearable smart sensor systems integrated on soft contact lenses for wireless ocular diagnostics10.1038/ncomms14997 ↗
13. Monolithic integration of silicon nanowire networks as a soft wafer for highly stretchable and transparent electronics10.1021/acs.nanolett.9b02291 ↗
14. Plasma-enhanced chemical vapour deposition growth of Si nanowires with low melting point metal catalysts: an effective alternative to Au-mediated growth10.1088/0957-4484/18/50/505307 ↗
15. In situ generation of indium catalysts to grow crystalline silicon nanowires at low temperature on ITO10.1039/b813046a ↗
16. Direct growth of Si nanowires on flexible organic substrates10.1088/0957-4484/27/22/225601 ↗
17. Vapor–liquid–solid silicon nanowires growth catalyzed by indium: study of indium oxide effect10.1007/s10854-019-01311-2 ↗
18. A detailed study of kinking in indium-catalyzed silicon nanowires10.1039/C5CE00773A ↗
19. Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism10.1016/S0009-2614(00)00519-4 ↗
20. Device fabrication with solid–liquid–solid grown silicon nanowires10.1088/0957-4484/19/18/185701 ↗
21. Catalytic growth of nanowires: Vapor–liquid–solid, vapor–solid–solid, solution–liquid–solid and solid–liquid–solid growth10.1016/j.cossms.2007.03.002 ↗
22. Wetting layer: the key player in plasma-assisted silicon nanowire growth mediated by tin10.1021/jp403063d ↗
23. 4 nm ZnO nanocrystals fabrication through electron beam irradiation on the surface of a ZnO nanoneedle formed by thermal annealing10.1039/C6CE02187E ↗