Growth of nanowire arrays from micron-feature templates

Abstract Here, we present a two-step annealing procedure to imprint nanofeatures on SiO ₂ starting from metallic microfeatures. The first annealing transforms the microfeatures into gold nanoparticles and the second imprints these nanoparticles into the SiO ₂ layer with nanometric control. The resulting nanohole arrays show a high ensemble uniformity. As a potential application, the nanohole mask is used as a selective mask for the Ga self-assisted growth of GaAs nanowires (NWs). Thus, for the first time, a successful implementation of nano-self-imprinting that links high-throughput microlithography with bottom-up NW growth is shown. The beneficial hole morphology of the SiO ₂ mask promotes high Ga droplet contact angles with the silicon substrate and the formation of single droplets in the mask holes. This droplet predeposition configuration enables a high vertical yield of NWs. Thus, this article describes a new protocol to grow NW devices that combines simultaneously nanosized holes and parallel processing.