High voltage endurance and switchable resistance effect observed in nanoscale copper groove structure
Source abstract
Abstract
Abstract A switchable lateral resistance effect with high reverse voltage has been observed in nanoscale copper groove structure. With the stimulation of electric pulse and local illumination of laser, the lateral resistance of the structure can be modulated in a non-volatile manner. We attribute this phenomenon to the different width of depletion region and the Schottky barrier change caused by the nanoscale charge trapping effect. This work may inspire a new approach of resistance modulation and help the development of laser-assisted electric pulse merged devices.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
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