journal article·2016-09-23Open access

Topologically induced fractional Hall steps in the integer quantum Hall regime ofMoS2

SK Firoz Islam, Colin Benjamin

Nanotechnology· Volume 27· Issue 38

Abstract

The quantum magnetotransport properties of a monolayer of molybdenum disulfide are derived using linear response theory. In particular, the effect of topological terms on longitudinal and Hall conductivity is analyzed. The Hall conductivity exhibits fractional steps in the integer quantum Hall regime. Further complete spin and valley polarization of the longitudinal conductivitity is seen in presence of these topological terms. Finally, the Shubnikov-de Hass oscillations are suppressed or enhanced contingent on the sign of these topological terms.
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Research context

OpenAlex topics: Topological Materials and Phenomena · Quantum and electron transport phenomena · Chemical and Physical Properties of Materials

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