Cu 2 Te–Ag 2 Te lateral topological insulator heterojunction: stability and properties
Source abstract
Abstract
Abstract Different from most of the two-dimensional (2D) topological insulators (TIs) with small bulk band gaps, 2D TIs of Cu 2 Te and Ag 2 Te have been found to exhibit sizeable bulk gaps with potentials for device applications in room-temperature. Here we have further explored the stability and electronic properties of a lateral heterojunction consisting of Cu 2 Te and Ag 2 Te. We have found that this heterojunction has buckled geometrical configuration that is dynamically stable, and it is a TI as identified by calculating the Z 2 topological invariant and the edge states. The band gap of the lateral heterojunction is between those of pristine Cu 2 Te and Ag 2 Te sheets, and it can be effectively tuned by varying the relative width of the two ribbons in this heterojunction.
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Research context
OpenAlex topics: Erosion and Abrasive Machining · Fluid Dynamics and Heat Transfer · Laser-Plasma Interactions and Diagnostics
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