Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

Abstract We investigate the electrical and thermal conductivities of the two-dimensional electron gas (2DEG) confined in the quantum well formed at the heterojunction between a thin GaN layer and an AlN layer strained by an Al _x Ga _{1− x} N capping layer in the temperature range from 10 to 360 K. The experimental protocol developed to deduce from calorimetric and Hall-effect measurements at a variable temperature the critical characteristics and transport properties of the confined 2DEG is presented. It is found that, in the measured temperature range (10–360 K), the electrical conductivity of the 2DEG is temperature-independent, due to the predominance of scattering processes by interface defects. However, the thermal conductivity shows a linear temperature dependence, mirroring the specific heat of free electrons. The temperature-independent relaxation time associated with the overall electron scattering means that the values obtained for electrical and thermal conductivities are in excellent agreement with those stipulated by the Weidemann–Franz law. It is also found that for weak strain fields in the AlN layer, both the electrical and thermal conductivities of the two-dimensional interfacial electrons increase exponentially with strain. The importance of 2DEG in AlN/GaN quantum wells lies in the fact that the strong piezoelectricity of AlN allows the transport properties of the 2DEG to be tuned or modulated by a weak electric field even with the high density of lattice mismatch induced defects at the AlN-GaN interface .