Optical absorption and birefringence in GaAs/AlAs MQW structures due to intersubband electron transitions

L E Vorobjev; S N Danilov; I E Titkov; D A Firsov; V A Shalygin; A E Zhukov; A R Kovsh; V M Ustinov; V Ya Aleshkin; B A Andreev; A A Andronov; E V Demidov

doi:10.1088/0957-4484/11/4/305

journal article·2000-12-01

Optical absorption and birefringence in GaAs/AlAs MQW structures due to intersubband electron transitions

L E Vorobjev, S N Danilov, I E Titkov, D A Firsov, V A Shalygin, A E Zhukov, A R Kovsh, V M Ustinov, V Ya Aleshkin, B A Andreev, A A Andronov, E V Demidov

Nanotechnology· Volume 11· Issue 4

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Abstract

For the first time the electrooptical phenomena due to intersubband electron transitions were investigated in GaAs/AlAs MQW structures. These structures are purposed for creation a mid infrared laser of new type. Experimental results on electron redistribution between size- quantization levels under electron heating were obtained up to electric field of 3500 V/cm.

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Research context

OpenAlex topics: Spectroscopy and Laser Applications · Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (6)

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