Excitons in nitride-based low-dimensional systems
Source abstract
Abstract
The exciton binding energy is large (25-27 meV) in bulk GaN. The coupling with the electromagnetic is large too. Together with a collegue I predicted a Rabbi oscillation splitting of some 45 meV in GaN based microcavities.
Only a short abstract or summary was supplied by the source.
Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
Show source-provided references
1. 10.1103/PhysRevB.57.376110.1103/PhysRevB.57.3761 ↗
2. 10.1016/S0921-5107(98)00326-210.1016/S0921-5107(98)00326-2 ↗
3. Leroux M · Phys. Rev. · 1999 · 58 · R1337110.1103/PhysRevB.58.R13371 ↗
4. 10.1103/PhysRevB.60.149610.1103/PhysRevB.60.1496 ↗
5. 10.1002/(SICI)1521-3951(199911)216:1<371::AID-PSSB371>3.0.CO;2-S10.1002/(SICI)1521-3951(199911)216:1<371::AID-PSSB371>3.0.CO;2-S ↗
6. 10.1002/1521-396X(200007)180:1<127::AID-PSSA127>3.0.CO;2-Z10.1002/1521-396X(200007)180:1<127::AID-PSSA127>3.0.CO;2-Z ↗
7. 10.1002/(SICI)1521-3951(199911)216:1<221::AID-PSSB221>3.0.CO;2-F10.1002/(SICI)1521-3951(199911)216:1<221::AID-PSSB221>3.0.CO;2-F ↗
8. 10.1002/(SICI)1521-3951(199911)216:1<361::AID-PSSB361>3.0.CO;2-W10.1002/(SICI)1521-3951(199911)216:1<361::AID-PSSB361>3.0.CO;2-W ↗
9. 10.1063/1.135151710.1063/1.1351517 ↗
10. 10.1063/1.135266410.1063/1.1352664 ↗