Random potential device using quantum percolation phenomenon
Source abstract
Abstract
We propose a new type of electronic device in which a quantum percolation phenomenon is utilized. We calculate steady-state wavefunctions in random potential systems by the steepest-descent method and made clear the relation between the correlation length of the wavefunction and the concentration and height of the random potentials. We find that the correlation length becomes minimum at an intermediate potential concentration which coincides with the classical percolation point in the case of low potential barriers. In the case of high potential barriers, the correlation length becomes minimum in a higher concentration region because of the decrease in the tunnelling probability of the electron through the random potential clusters. Finally, we investigate the appropriate concentration of random potentials for a switching device and find that the concentration should be 0.6 which is, in fact, the classical percolation concentration.
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Research context
OpenAlex topics: Quantum and electron transport phenomena · Quantum Computing Algorithms and Architecture · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
Show source-provided references
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