Surface energy-controlled in-plane growth oft-Se nanowires transformed froma-Se colloids
Source abstract
Abstract
This study investigated the surface energy-controlled transformation of amorphous Se (a-Se) colloids into trigonal Se (t-Se) crystals on solid substrates. Hydrophilic surfaces generated nanowires laterally grown along the surface of the substrates, while on hydrophobic surfaces the nanowires on the colloidal surface were randomly oriented. The ripening was considered to govern the growth of t-Se nanowires. The in-plane growth of the nanowires along the substrates made possible the creation of a chemically interconnected nanowire network because the nanowires made branches on meeting other a-Se colloids and formed chemical junctions on encountering other growing nanowires.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
Show source-provided references
1. 10.1002/adma.20039008710.1002/adma.200390087 ↗
2. 10.1063/1.129027210.1063/1.1290272 ↗
3. 10.1126/science.291.5504.63010.1126/science.291.5504.630 ↗
4. 10.1002/1521-3773(20020118)41:2<353::AID-ANIE353>3.0.CO;2-Y10.1002/1521-3773(20020118)41:2<353::AID-ANIE353>3.0.CO;2-Y ↗
5. 10.1021/nl049659j10.1021/nl049659j ↗
6. Islam M S · Nanotechnology · 2004 · 15 · L510.1088/0957-4484/15/5/L01 ↗
7. 10.1063/1.235789010.1063/1.2357890 ↗
8. 10.1063/1.180395110.1063/1.1803951 ↗
9. 10.1021/nl060883d10.1021/nl060883d ↗
10. 10.1002/1521-4095(200010)12:20<1526::AID-ADMA1526>3.0.CO;2-B10.1002/1521-4095(200010)12:20<1526::AID-ADMA1526>3.0.CO;2-B ↗
11. 10.1126/science.107208610.1126/science.1072086 ↗
12. Mayers B · Int. J. Nanotechnol. · 2004 · 1 · 8610.1504/IJNT.2004.003713 ↗
13. 10.1021/la050801l10.1021/la050801l ↗
14. Zhang B · Nanotechnology · 2006 · 17 · 38510.1088/0957-4484/17/2/007 ↗
15. Berger L I · Semiconductor Materials · 1997 · 86
16. 10.1109/JRPROC.1962.28819010.1109/JRPROC.1962.288190 ↗
17. 10.1109/16.97474210.1109/16.974742 ↗
18. 10.1007/BF0270801910.1007/BF02708019 ↗
19. Sun Y · J. Am. Chem. Soc. · 2004 · 126 · 3862
20. 10.1021/ja016689510.1021/ja0166895 ↗
21. 10.1039/b606682h10.1039/b606682h ↗
22. 10.1039/b617714j10.1039/b617714j ↗
23. 10.1002/adma.20040049810.1002/adma.200400498 ↗
24. Ratke L · Growth and Coarsening: Ostwald Ripening in Material Processing · 2002 · 11710.1007/978-3-662-04884-9_6 ↗
25. 10.1021/cm034193b10.1021/cm034193b ↗
26. 10.1002/adma.20030631710.1002/adma.200306317 ↗