Atomic layer etching and sidewall roughness measurement using the scanning tunneling microscope

Nanostructure technology has been studied by electron beam induced surface reaction using scanning tunneling microscopy (STM). Atomic layer etching for GaAs has been achieved by STM-assisted etching using a Cl2 adlayer. Moreover the side-wall roughness of GaAs patterns etched by reactive ion beam etching has been successfully measured using a new STM tip made by electron beam deposition.