journal article·2008-01-09

Designing spatial correlation of quantum dots: towards self-assembled three-dimensional structures

J R R Bortoleto, J G Zelcovit, H R Gutiérrez, J Bettini, M A Cotta

Nanotechnology· Volume 19· Issue 1
Publisher page

Abstract

Buried two-dimensional arrays of InP dots were used as a template for the lateral ordering of self-assembled quantum dots. The template strain field can laterally organize compressive (InAs) as well as tensile (GaP) self-assembled nanostructures in a highly ordered square lattice. High-resolution transmission electron microscopy measurements show that the InAs dots are vertically correlated to the InP template, while the GaP dots are vertically anti-correlated, nucleating in the position between two buried InP dots. Finite InP dot size effects are observed to originate InAs clustering but do not affect GaP dot nucleation. The possibility of bilayer formation with different vertical correlations suggests a new path for obtaining three-dimensional pseudocrystals.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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