Magnetic random access memory design using rings with controlled asymmetry

A S Mani; D Geerpuram; A Domanowski; V Baskaran; V Metlushko

doi:10.1088/0957-4484/15/10/024

journal article·2004-10-01

Magnetic random access memory design using rings with controlled asymmetry

A S Mani, D Geerpuram, A Domanowski, V Baskaran, V Metlushko

Nanotechnology· Volume 15· Issue 10

Publisher page

Source abstract

Abstract

Narrow permalloy ring elements with different symmetries have been investigated. Two stable states of opposite polarity at remanence and simple switching have been observed using magnetic-force microscopy.

Only a short abstract or summary was supplied by the source.

Source: openalex_inverted_index · Quality: short

Research context

OpenAlex topics: Magnetic properties of thin films · Magneto-Optical Properties and Applications · Phase-change materials and chalcogenides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references

1. 10.1063/1.37280510.1063/1.372805 ↗

2. 10.1063/1.157722410.1063/1.1577224 ↗

3. 10.1103/PhysRevLett.86.110210.1103/PhysRevLett.86.1102 ↗

4. 10.1103/PhysRevB.68.13442610.1103/PhysRevB.68.134426 ↗

5. 10.1103/PhysRevLett.86.109810.1103/PhysRevLett.86.1098 ↗

6. Kläui M · J. Magn. Magn. Mater. · 2002 · 240 · 110.1016/S0304-8853(01)00709-0 ↗

7. 10.1063/1.155775810.1063/1.1557758 ↗

8. 10.1063/1.149062610.1063/1.1490626 ↗

9. 10.1063/1.155739210.1063/1.1557392 ↗

10. 10.1063/1.155776010.1063/1.1557760 ↗