Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: fabrication and properties

I G Neizvestny; S P Suprun; V N Shumsky; A B Talochkin; E V Fedosenko; T M Burbaev; V A Kurbatov

doi:10.1088/0957-4484/12/4/310

journal article·2001-12-01

Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: fabrication and properties

I G Neizvestny, S P Suprun, V N Shumsky, A B Talochkin, E V Fedosenko, T M Burbaev, V A Kurbatov

Nanotechnology· Volume 12· Issue 4

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Abstract

For the very first time ensembles of Ge quantum dots have been formed in an unstrained heterosystem of GaAs/ZnSe/Ge. The geometric properties (dimensional characteristics) and electronic structure of the islands were studied using scanning tunnelling microscopy, Raman spectroscopy and photoluminescence.

Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Photonic and Optical Devices · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (7)

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