Galvanic deposition of nanocrystalline ZnO thin films from a ZnO–Zn(OH)₂mixed phase precursor on p-Si substrate

A galvanic technique for the deposition of ZnO thin films is reported. The depositions were carried out on p-type single-crystal silicon substrates at room temperature, from a solution of ZnSO(4), where the Zn rod acted as a sacrificing anode and p-Si was the cathode. The deposition of ZnO by this method is pH sensitive, and a pH between 4 and 5 is found to be optimum for film deposition. This deposition technique is simple, inexpensive and can be carried out at room temperature. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies revealed the nanocrystalline structure of the films. The resistivity of the annealed ZnO films was determined by the Van der Pauw measurement technique.