New prospects for silicon-based terabit memories and data storage systems
Source abstract
Abstract
Recent calculations of Fowler-Nordheim tunnelling through `crested' (graded) tunnel barriers have indicated that floating-gate structures using such barriers may combine multi-year retention time with nanosecond recharging time. This effect may be used for the implementation of terabit-scalable, non-volatile random-access memories (NOVORAM) and ultradense electrostatic data storage systems (ESTOR) which may revolutionize digital electronics. In particular, if combined with ultrafast rapid single-flux-quantum (RSFQ) logic circuits, the new memory and storage techniques may lead to the development, within a few years, of teraflops-scale desktop computers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum and electron transport phenomena · Physics of Superconductivity and Magnetism · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (47)
Show source-provided references
1. Semiconductor Industry Association · 1997
2. Likharev K K · IBM J. Res. Devel. · 1988 · 32 · 14410.1147/rd.321.0144 ↗
3. Averin D V · 1991 · 173
4. Averin D V · 1992
5. Likharev K K · 1999
6. 10.1063/1.12121810.1063/1.121218 ↗
7. Likharev K K · 1995 · 355
8. Prince B · 1991
9. Prince B · 1998
10. Averin D V · J. Low Temp. Phys. · 1986 · 62 · 34510.1007/BF00683469 ↗
11. Likharev K K · IEEE Trans. Magn. · 1987 · 23 · 114210.1109/TMAG.1987.1065001 ↗
12. 10.1103/PhysRevLett.59.10910.1103/PhysRevLett.59.109 ↗
13. 10.1063/1.11978010.1063/1.119780 ↗
14. Sze S M · 1981
15. DiStefano T H · US. Patent · 1976
16. 10.1063/1.32672810.1063/1.326728 ↗
17. 10.1063/1.9149210.1063/1.91492 ↗
18. Malik R J · Electron. Lett. · 1980 · 16 · 83710.1049/el:19800594 ↗
19. 10.1109/55.74910.1109/55.749 ↗
20. 10.1063/1.32793410.1063/1.327934 ↗
21. Hao M-Y · Appl. Phys. · 1992 · 60 · 445
22. 10.1109/16.53534910.1109/16.535349 ↗
23. Likharev K K · 1998 · 395
24. 10.1063/1.12240210.1063/1.122402 ↗
25. Korotkov A N · Appl. Phys. Lett. · 1998
26. 1987 · 7
27. Belyi V I · 1988 · 148
28. Belyi V I · 1988 · 162
29. 10.1116/1.58589710.1116/1.585897 ↗
30. 10.1109/16.66122910.1109/16.661229 ↗
31. Wallmark J T · RCA Review · 1969 · 30 · 335
32. 10.1063/1.35665010.1063/1.356650 ↗
33. 10.1063/1.36091710.1063/1.360917 ↗
34. 10.1063/1.12047310.1063/1.120473 ↗
35. 10.1063/1.11823610.1063/1.118236 ↗
36. Naveh Y · Phys. Rev. · 1998
37. Likharev K K · 1995 · 42
38. Korotkov A N · VLSI Des. · 1997 · 3 · 201
39. 10.1063/1.34938810.1063/1.349388 ↗
40. 10.1126/science.276.5312.57910.1126/science.276.5312.579 ↗
41. 10.1063/1.11562210.1063/1.115622 ↗
42. Pettersson J · Phys. Rev. · 1996 · 53 · R1327210.1103/PhysRevB.53.R13272 ↗
43. Starmark B · Ext. Abs. ISEC'97 (Berlin: PTB) · 1997 · 391
44. 10.1126/science.280.5367.123810.1126/science.280.5367.1238 ↗
45. 10.1109/77.8074510.1109/77.80745 ↗
46. ber Likharev K K · Phys. World · 1997 · 10 · 33
47. Likharev K K · 1999