Source abstract
Abstract
The limited electrical conductivity of manganese dioxide (MnO 2 ) hinders its broad use as an electrode in all-solid-state supercapacitor devices (ASDs). To overcome this, trivalent gadolinium (Gd) and erbium (Er) ions are incorporated into MnO 2, effectively addressing the issue. This involves synthesizing α-MnO 2 nanorods infused with Gd and Er by using a modified chemical process. Through the creation of crystal defects, augmentation of electrical conductivity, and increased porosity, the electrochemical performance is significantly enhanced. Cyclic voltammetry and galvanostatic charge–discharge measurements within the range of −0.2 to +0.6 V unveil improved capacitance values of 798 and 647 F g −1 at 1 A g −1 current density for Gd- and Er-doped α-MnO 2 respectively, maintaining 92.4% and 89.7% charge retention after 5000 cycles. Analysis reveals that both samples are primarily dominated by electric double-layer capacitance (EDLC). Furthermore, surface capacitance outweighs diffusion-controlled processes in the electrochemical storage mechanism. The Gd-doped α-MnO 2 coated device depicts a peak energy density of 78.5 Wh kg –1 at 106.01 W kg –1 power density for 0.5 A g −1 and maximum power density of 498.1 W kg –1 at 9.13 Wh kg –1 energy density for 3 A g −1 . Even a handcrafted 1 cm × 1 cm device achieves 2.252 V potential, effectively illuminating commercial LEDs.
Source: openalex_inverted_index · Quality: baseline
Affiliations
Department of Physics, Nabagram Hiralal Paul College, Hooghly 712246, India
Department of Physics, Jadavpur University, Kolkata 700032, India
University of Engineering and Management, Kolkata 700160, India
Department of Physics, Raja Rammohun Roy Mahavidyalaya, Hooghly 712406, India
Chemical Sciences Division, Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata 700064, India
School of Mechanical Engineering, Yeungnam University, Gyeongsan, Gyeongsanbuk-do 38541, South Korea
Center of Nanoscience, Indian Institute of Science, Bangalore 560012, India