Graphene p–n–p junctions controlled by local gates made of naturally oxidized thin aluminium films
Source abstract
Abstract
Graphene structures with both top- and bottom-electrostatic gates are studied. The top gate is made of thin aluminium (Al) film deposited directly onto graphene, with no prior dielectric layer in between. Natural oxidation of Al at the interface with graphene results in an insulating barrier proving useful in making top gates to graphene. For electrically disconnected top gate, graphene resistance as a function of the slowly-varying back-gate voltage shows hysteresis which reveals dielectric properties of the barrier. The estimated barrier thickness is only 2 nm allowing for very sharp profiles of the electric field in graphene devices. By applying voltages to both back- and top gates, effective p–n–p junctions with sharp interfaces can be created.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
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