Electron holography on HfO 2 /HfO 2− x bilayer structures with multilevel resistive switching properties
Source abstract
Abstract
Abstract Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO 2 -based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico–chemical properties of oxygen-deficient amorphous HfO 2− x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO 2 /HfO 2− x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO 2 /HfO 2− x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Xi’an Jiaotong University
IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder),
Technische Universität Darmstadt
Technische Universität Berlin
BTU Cottbus-Senftenberg, Konrad-Zuse-Str. 1, D-03046 Cottbus,
Funding
Deutsche Forschungsgemeinschaft · National Natural Science Foundation of China
References (41)
Show source-provided references
1. Nanoionics-based resistive switching memories10.1038/nmat2023 ↗
2. Zhang · 200910.1007/978-0-387-88497-4 ↗
3. Bez · 2009
4. Cross-point resistive switching memory and urea sensing by using annealed GdOx film in IrOx/GdOx/W structure for biomedical applications10.1149/2.1011704jes ↗
5. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing10.1038/nmat4756 ↗
6. Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer10.1016/j.mssp.2015.12.012 ↗
7. Multilevel switching in forming-free resistive memory devices with atomic layer deposited HfTiOx nanolaminate10.1109/LED.2013.2262917 ↗
8. Modeling for multilevel switching in oxide-based bipolar resistive memory10.1088/0957-4484/23/22/225702 ↗
9. Intrinsic mechanisms of memristive switching10.1021/nl200707n ↗
10. Physics of the switching kinetics in resistive memories10.1002/adfm.201500825 ↗
11. Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure10.1063/1.4939682 ↗
12. Improved resistive switching phenomena and mechanism using Cu–Al alloy in a new Cu:AlOx/TaOx/TiN structure10.1016/j.jallcom.2015.02.168 ↗
13. Emulating short-term synaptic dynamics with memristive devices10.1038/srep18639 ↗
14. Electronic system with memristive synapses for pattern recognition10.1038/srep10123 ↗
15. A low energy oxide-based electronic synaptic device for neuromorphic visual systems with tolerance to device variation10.1002/adma.201203680 ↗
16. A 45 nm logic technology with high-k+metal gate transistors strained silicon 9 Cu interconnect layers 193 nm dry patterning and 100% Pb-free packaging10.1109/IEDM.2007.4418914 ↗
17. A review on resistive switching in high-k dielectrics: a nanoscale point of view using conductive atomic force microscope10.3390/ma7032155 ↗
18. Chemical and structural properties of conducting nanofilaments in TiN/HfO2 -based resistive switching structures10.1088/0957-4484/24/8/085706 ↗
19. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory10.1038/nnano.2009.456 ↗
20. Microscopy study of the conductive filament in HfO2 resistive switching memory devices10.1016/j.mee.2013.03.145 ↗
21. Electron holography—basics and applications10.1088/0034-4885/71/1/016102 ↗
22. Pt/Ta2O5/HfO2−x/Ti resistive switching memory competing with multilevel NAND flash10.1002/adma.201501167 ↗
23. Self-limited switching in Ta2O5/TaOx memristors exhibiting uniform multilevel changes in resistance10.1002/adfm.201403621 ↗
24. Enhanced resistive switching and multilevel behavior in bilayered HfAlO/HfAlOx structures for non-volatile memory applications10.1063/1.4937801 ↗
25. Controlled oxygen vacancy induced P-type conductivity in HfO2−x thin films10.1063/1.3637603 ↗
26. Towards forming-free resistive switching in oxygen engineered HfO2−x10.1063/1.4864653 ↗
27. Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories10.1063/1.4893605 ↗
28. atomic vapor deposition of titanium nitride as metal electrodes for gate-last CMOS and MIM devices10.1002/cvde.200806695 ↗
29. X-ray diffraction of III-nitrides10.1088/0034-4885/72/3/036502 ↗
30. Determination of the mean inner potential in III–V semiconductors, Si and Ge by density functional theory and electron holography10.1016/j.ultramic.2005.06.057 ↗
31. Impact of electron irradiation on electron holographic potentiometry10.1063/1.4894718 ↗
32. Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO2±x10.1063/1.4767379 ↗
33. Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance10.1063/1.4864396 ↗
34. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures10.1038/nmat3070 ↗
35. Resistive switching effects in oxide sandwiched structures10.1007/s11706-012-0170-8 ↗
36. Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices10.1063/1.4926340 ↗
37. Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices10.1063/1.4791695 ↗
38. In-operando hard x-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells10.1063/1.4879678 ↗
39. Approaches for improving the performance of filament-type resistive switching memory10.1007/s11434-010-4255-4 ↗
40. HfOx/TiOx/HfOx/TiOx multilayer-based forming-free RRAM devices with excellent uniformity10.1109/LED.2011.2109033 ↗
41. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance10.1038/srep25757 ↗