Simultaneous formation of two ripple modes on ion sputtered silicon
Source abstract
Abstract
The amorphized surface of Si(100) sputtered with low energy ions at moderate temperature was found to develop two perpendicular ripple patterns overlaying each other. The evolution of these patterns was studied over a wide range of fluence. Coarsening of both ripple modes was observed, showing a similar time dependence with a coarsening exponent of n approximately 0.08. In the high fluence regime, the surface enters a steady state with both ripple modes still present.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ion-surface interactions and analysis · Diamond and Carbon-based Materials Research · Force Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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