journal article·2022-07-22

Large and Uniform Single Crystals of MoS2 Monolayers for ppb-Level NO2 Sensing

Chandrabhan Patel, Ruchi Singh, Mayank Dubey, Sushil Kumar Pandey, Shrish Nath Upadhyay, Vikash Kumar, Sharath Sriram, Myo Than Htay, Srimanta Pakhira, Victor V. Atuchin, Shaibal Mukherjee

ACS Applied Nano Materials· Volume 5· Issue 7
Publisher page

Abstract

Recently, unprecedented interest has been immersed toward the synthesis of two-dimensional (2D) transition metal dichalcogenides via the chemical vapor deposition (CVD) system. Synthesis of a uniform and large-sized monolayer MoS2 atomic thin film via CVD is still a major bottleneck owing to strong dependence on diverse associated growth parameters. In this work, we have proposed the most viable recipe which is suitable for controlling the nucleation density of Mo and producing a 90 μm-long MoS2 monolayer crystal and (695 × 394.8) μm2 large MoS2 monolayered film on SiO2/Si and c-plane sapphire, respectively. Moreover, MoS2 monolayer sensing performance has been thoroughly investigated for NO2 exposure at room temperature with a varying response of 4–57.5 for the 100–100 ppm level. Furthermore, the MoS2 monolayer sensor exhibits an ultrasensitive NO2 detection with limit of detection and limit of qualification values of 1.4 and 4.6 ppb, respectively. In addition, the first-principles-based density functional theory has been employed to analyze the adsorption of NO2 on the surfaces of the 2D MoS2 monolayer. It is observed that the electronic band gap of the MoS2 monolayer after NO2 adsorption is reduced by 0.7 eV due to molecular orbital hybridization.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Gas Sensing Nanomaterials and Sensors · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical Engineering, Indian Institute of Technology Indore, Indore, Madhya Pradesh 453552, India

Department of Electronics and Communication Engineering, National Institute of Technology, Surathkal, Karnataka 575025, India

Department of Metallurgy and Materials Science (MEMS), Indian Institute of Technology Indore, Indore, Madhya Pradesh 453552, India

Department of Physics, Indian Institute of Technology, Indore, Madhya Pradesh 453552, India

Functional Materials and Microsystems Research Group, RMIT University, Melbourne, Victoria 3001, Australia

Hashimoto-Myo Laboratory, Department of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano City, Nagano Prefecture 380-8553, Japan

Centre for Advanced Electronics (CAE), Indian Institute of Technology Indore, Indore, Madhya Pradesh 453552, India

Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia

Department of Applied Physics, Novosibirsk State University, Novosibirsk 630090, Russia

Research and Development Department, Kemerovo State University, Kemerovo 650000, Russia

Department of Industrial Machinery Design, Novosibirsk State Technical University, Novosibirsk 630073, Russia

School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia

Funding

University Grants Commission · Science and Engineering Research Board · Japan Society for the Promotion of Science · Ministry of Human Resource Development · Indian Institute of Technology Bombay · Ministry of Education and Science of the Russian Federation

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