DataVXNanotechnologyPaper
journal article·2011-12-02

Sub-nanosecond switching of a tantalum oxide memristor

Antonio C Torrezan, John Paul Strachan, Gilberto Medeiros-Ribeiro, R Stanley Williams

Nanotechnology· Volume 22· Issue 48
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Source abstract

Abstract

We report sub-nanosecond switching of a metal-oxide-metal memristor utilizing a broadband 20 GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120 ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.
Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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