journal article·2026

Anomalous Hall effect in room-temperature two-dimensional van der Waals ferromagnets

Hao Wu, Li Yang, Gaojie Zhang, Wen Jin, Jie Yu, Bichen Xiao, Wenfeng Zhang, Haixin Chang

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Abstract

The anomalous Hall effect (AHE) has emerged as a powerful probe of the interplay between magnetism, electronic band topology, and spin-dependent quantum transport in two-dimensional (2D) magnetic materials. While extensive efforts have been devoted to the AHE in 2D magnets, most studies have been confined to ultra-low temperatures or regimes far below room temperature, limiting both fundamental understanding and practical applicability. The recent discovery of several high-temperature van der Waals (vdW) ferromagnets has opened up a promising platform for investigating the underlying mechanisms and device opportunities of the AHE at and above room temperature. In this review, we provide a comprehensive overview of recent advancements of the AHE in room-temperature 2D vdW ferromagnets. We first summarize the macroscopic manifestations of the AHE in representative vdW ferromagnets operating at room temperature. Then, we provide an overview of typical vdW ferromagnetic systems exhibiting room-temperature AHE, with a particular focus on thickness dependence, Curie temperature, magnetic anisotropy, and materials engineering strategies such as chemical doping, strain engineering, and interface design, together with state-of-the-art synthesis techniques. Subsequently, we discuss and compare the key microscopic mechanisms underlying the AHE in these materials, including intrinsic Berry-curvature-driven contributions and extrinsic contributions. Based on this understanding, recent progress in electrically tuning the AHE via external electric fields and applied currents is systematically reviewed, highlighting their impacts on anomalous Hall resistance, coercivity, and critical temperature. We further summarize advances in different types of electrically controlled vdW magnetic prototype devices, including current-tunable AHE devices and magnetic tunnel junctions. Finally, we outline the significant progress achieved so far, identify the key remaining challenges, and propose promising directions for future research toward robust and functional room-temperature AHE.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan

Wuhan National High Magnetic Field Center and Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, China

Funding

National Natural Science Foundation of China · National Key Research and Development Program of China · Natural Science Foundation of Hubei Province · Science, Technology and Innovation Commission of Shenzhen Municipality · Huazhong University of Science and Technology

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