journal article·2019-07-26

Nitrogen–Sulfur Co-Doped Reduced Graphene Oxide-Nickel Oxide Nanoparticle Composites for Electromagnetic Interference Shielding

Rajesh Kumar, Wagner C. Macedo, Rajesh K. Singh, Vidhu S. Tiwari, Carlos J. L. Constantino, Atsunori Matsuda, Stanislav A. Moshkalev

ACS Applied Nano Materials· Volume 2· Issue 7
Publisher page

Abstract

The present work demonstrates the microwave-assisted synthesis of two different structural morphologies containing nickel oxide nanoparticles (NiO NPs) embedded in nitrogen (N) and sulfur (S) co-doped reduced graphene oxide (NS-rGO) nanosheets. The synthesized NiO anchored on NS-rGO nanosheets (NS-rGO-NiO composites) and NiO covered by NS-rGO nanosheets (NS-rGO:NiO composites) were used as an application in electromagnetic interference (EMI) shielding effectiveness (SE). The EMI SE studies reveal that NS-rGO:NiO composites show improved performance as compared to NS-rGO-NiO composites. In NS-rGO:NiO composites, the covered surface of NiO NPs by conducting NS-rGO nanosheets helps to improve the EMI SE application. The synthesized composite materials were extensively characterized using various techniques including scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, thermogravimetric analysis, Raman spectroscopy, and X-ray photoelectron spectroscopy. Binding energy of N/S element in rGO nanosheets were analyzed by XPS and it is confirmed that the N atoms were present in three states in carbon skeleton of NS-rGO nanosheets as pyridinic, pyrrolic, and graphitic states; however, S atoms were present in single state as C–S–C configuration. The as synthesized NS-rGO:NiO composites reveal good performance for EMI applications and demonstrate the SE value of more than ∼21 dB at thickness of 1.1 mm film of NS-rGO:NiO composites in microwave X-band range (8.2–12.4 GHz).
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Research context

OpenAlex topics: Electromagnetic wave absorption materials · Advanced Energy Technologies and Civil Engineering Innovations · Urban Transport Systems Analysis

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Affiliations

Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan

Faculty of Science and Technology, Department of Physics, São Paulo State University, Presidente Prudente 19060-900, São Paulo, Brazil

School of Physical & Material Sciences, Central University of Himachal Pradesh (CUHP), Kangra, Dharamshala, Himachal Pradesh 176215, India

Department of Physics, SRM University, Delhi-NCR, Sonepat, Haryana 131029, India

Centre for Semiconductor Components and Nanotechnology (CCS Nano), University of Campinas (UNICAMP), Campinas 13083-870, São Paulo, Brazil

Funding

Minist??rio da Ci??ncia, Tecnologia e Inova????o · Ministry of Education, Culture, Sports, Science and Technology · Funda????o de Amparo ?? Pesquisa do Estado de S??o Paulo

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