Source abstract
Abstract
The incorporation of a SiC interfacial layer has been recognized as an effective strategy to tackle the interface contact issue between Si and carbon, ensuring the structural integrity of Si-based anodes and thereby enhancing their cycling stability. However, its inherent low activity and poor conductivity pose a persistent challenge for maximizing capacity and facilitating ion and electron transport. Here, we present a thickness/content adjustable SiC interfacial layer in the Si-SiC-C heterostructure using a modified spark plasma sintering technique. The SiC layer, with a content of ∼10%, is discretely coated on the surface of the Si core, exerting minimal influence on capacity and ion/electron kinetics, while ensuring high electrode structural stability. Consequently, the Si-based anode exhibits a stable capacity of 582 mAh g-1 (0.1 A g-1) and good rate capability (324 mAh g-1 at 2 A g-1), while maintaining 80% capacity retention over 500 cycles with a low electrode swelling of 12.6%. More importantly, its capacity presents a continuous rising trend with the increase of the cycle number, suggesting a mechanism where the SiC interfacial layer gradually transforms into a Li-ion-rich phase. This transformation facilitates ion transport and reaction with Si, resulting in gradual capacity enhancement. Therefore, the reasonably thickness-regulated SiC interfacial layer holds promise for providing inspiration for the design of commercial Si-based anodes.
Affiliations
Department of Material Science and Engineering, National University of Singapore, Singapore 117575, Singapore
Center for Advanced 2D Materials, National University of Singapore, Singapore 117546, Singapore
Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117544, Singapore
Department of Physics, National University of Singapore, Singapore 117551, Singapore
Funding
National Research Foundation Singapore · Ministry of Education - Singapore · Economic Development Board - Singapore · Agency for Science, Technology and Research · King Abdullah University of Science and Technology