article·2017-01-01

スイッチング信頼性のためのTa_2O_5とHfO_2抵抗スイッチングメモリにおける導電性フィラメントと非フィラメント領域の役割【Powered by NICT】

Park Tae Hyung, Kim Hae Jin, Park Woo Young, Kim Soo Gil, Choi Byung Joon, Hwang Cheol Seong

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OpenAlex topics: Military Technology and Strategies · Legal and Regulatory Analysis · Linguistic, Cultural, and Literary Studies

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