article·2017-01-01

強誘電性AlドープHfO_2/HfO_2ゲート誘電体スタックにおける負性容量効果によるMoS_2トランジスタにおけるサブしきい値スイングの改善【Powered by NICT】

Nourbakhsh Amirhasan, Zubair Ahmad, Joglekar Sameer, Mildred Dresselhaus, Palacios Tomas

Abstract

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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Ferroelectric and Negative Capacitance Devices · Ga2O3 and related materials

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