Correction: Simulation of the resistance switching performance and synaptic behavior of TiO 2 -based RRAM devices with CoFe 2 O 4 insertion layers
Source abstract
Abstract
Correction for ‘Simulation of the resistance switching performance and synaptic behavior of TiO 2 -based RRAM devices with CoFe 2 O 4 insertion layers’ by Fei Yang et al. , Nanoscale , 2024, 16 , 6729–6738, https://doi.org/10.1039/D3NR05935A.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Advanced Nanomaterials in Catalysis
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Affiliations
School of Integrated Circuits, Anhui University, Hefei 230601, China
Funding
University Natural Science Research Project of Anhui Province · National Natural Science Foundation of China
References
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