Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
Source abstract
Abstract
Correction for ‘Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems’ by Seyeong Yang et al. , Nanoscale , 2023, https://doi.org/10.1039/D3NR01930F.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Machine Learning in Materials Science
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
Department of Electronic and Electrical Engineering, Ewha Womans University, Seoul 03760, South Korea
Funding
National Research Foundation of Korea
References
Reference metadata was not supplied for this record.