journal article·2022Open access

Electrically and optically erasable non-volatile two-dimensional electron gas memory

Dongxing Zheng, Junwei Zhang, Xin He, Yan Wen, Peng Li, Yuchen Wang, Yinchang Ma, Haili Bai, Husam N. Alshareef, Xi-Xiang Zhang

Nanoscale· Volume 14· Issue 34

Abstract

The high-mobility two-dimensional electron gas (2DEG) generated at the interface between two wide-band insulators, LaAlO3 (LAO) and SrTiO3 (STO), is an extensively researched topic. In this study, we have successfully realized reversible switching between metallic and insulating states of the 2DEG system via the application of optical illumination and positive pulse voltage induced by the introduction of oxygen vacancies as reservoirs for electrons. The positive pulse voltage irreversibly drives the electron to the defect energy level formed by the oxygen vacancies, which leads to the formation of the insulating state. Subsequently, the metallic state can be achieved via optical illumination, which excites the trapped electron back to the 2DEG potential well. The ON/OFF state is observed to be robust with a ratio exceeding 106; therefore, the interface can be used as an electrically and optically erasable non-volatile 2DEG memory.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials · Atomic and Subatomic Physics Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia

Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China

Key Laboratory of Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, PR China

State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Funding

King Abdullah University of Science and Technology · National Natural Science Foundation of China · Natural Science Foundation of Tianjin City

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