journal article·2017

Quantum confinement induced ultra-high intensity interfacial radiative recombination in nanolaminates

Jin Li, Xiaofang Bi

Nanoscale· Volume 9· Issue 42
Publisher page

Abstract

Al2O3/ZnO, Al2O3/TiO2, TiO2/ZnO and MgO/ZnO nanolaminates (NLs) were prepared using atomic layer deposition to explore the dependence of luminescence characterization on the sublayer width and constituents. When the ZnO sublayer width is larger than the Bohr radius in Al2O3/ZnO NLs, the UV luminescence arising from ZnO is reduced and even quenched with decreasing the ZnO width due to the nonradiative recombination (NR) caused by the existence of interface states, while for the ZnO width smaller than the Bohr radius, a visible luminescence rather than UV emission is observed and further enhanced with decreasing the ZnO width. It is also found that the visible luminescence needs a certain width of Al2O3 and is extinguished by the replacement of Al2O3 with TiO2. A theoretical model based on the configuration coordination and quantum confinement effect is proposed to understand the physical origin underlying the intriguing optical behaviour. The mechanism has generality and is applicable for other NLs as well, such as Al2O3/TiO2 and MgO/ZnO NLs with ultra-thin sublayers in which similar luminescence enhancements are also observed. This work may provide a promising approach for realizing high performance luminescence with various wavelengths for electro- and photo-luminescence applications in NLs.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Nonlinear Optical Materials Studies · Quantum Dots Synthesis And Properties · Optical properties and cooling technologies in crystalline materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Aerospace Materials and Performance (Ministry of Education)

School of Materials Science and Engineering

Beihang University (BUAA)

Beijing

China

Funding

National Natural Science Foundation of China

References (42)

Show source-provided references
1. Walke · J. Appl. Phys. · 2014 · 115 · 310.1063/1.4867780 ↗
2. Li · Appl. Phys. Lett. · 2010 · 96 · 1
3. Lee · Appl. Phys. Lett. · 2013 · 102 · 1
4. Homola · Surf. Coat. Technol. · 2015 · 284 · 19810.1016/j.surfcoat.2015.07.078 ↗
5. Kim · Appl. Surf. Sci. · 2012 · 258 · 308910.1016/j.apsusc.2011.11.043 ↗
6. Cheun · Adv. Funct. Mater. · 2012 · 22 · 153110.1002/adfm.201102968 ↗
7. Lee · Appl. Phys. Lett. · 2015 · 106 · 2290510.1063/1.4905871 ↗
8. Karvonen · Appl. Phys. Lett. · 2013 · 103 · 3190310.1063/1.4813557 ↗
9. Wickberg · Adv. Opt. Mater. · 2016 · 4 · 120310.1002/adom.201600200 ↗
10. Han · Thin Solid Films · 2014 · 552 · 15510.1016/j.tsf.2013.12.003 ↗
11. Kim · Phys. Chem. Chem. Phys. · 2015 · 18 · 104210.1039/C5CP06713H ↗
12. Kim · Sci. Adv. Mater. · 2015 · 7 · 249210.1166/sam.2015.2401 ↗
13. Azadmanjiri · RSC Adv. · 2016 · 6 · 10936110.1039/C6RA20050H ↗
14. Ahn · Thin Solid Films · 2015 · 584 · 33610.1016/j.tsf.2015.01.017 ↗
15. Zhang · Appl. Phys. Lett. · 2014 · 104 · 1
16. Lopez · J. Alloys Compd. · 2017 · 691 · 30810.1016/j.jallcom.2016.08.271 ↗
17. Iatsunskyi · J. Phys. Chem. C · 2015 · 119 · 2059110.1021/acs.jpcc.5b06745 ↗
18. Chaaya · J. Phys. Chem. C · 2014 · 118 · 381110.1021/jp411970w ↗
19. Viter · J. Phys. Chem. C · 2016 · 120 · 512410.1021/acs.jpcc.5b12263 ↗
20. H. Ibach and H.Luth, Solid-State Physics, an introduction to principles of material science, 2015, vol. 1
21. L. Harald and L.Hans, Solid-State Physics: An Introduction to Principles of Materials Science, Springer, Berlin, 2009
22. Wei · Phys. B · 2007 · 388 · 14510.1016/j.physb.2006.05.346 ↗
23. Sahai · Ceram. Int. · 2014 · 40 · 1456910.1016/j.ceramint.2014.06.041 ↗
24. Pan · ACS Photonics · 2016 · 3 · 21510.1021/acsphotonics.5b00267 ↗
25. Mahjoub · J. Phys. Chem. C · 2016 · 120 · 1165210.1021/acs.jpcc.6b00135 ↗
26. Fang · ACS Appl. Mater. Interfaces · 2015 · 7 · 1033110.1021/acsami.5b01100 ↗
27. Sanchez-Valencia · J. Phys. Chem. C · 2014 · 118 · 985210.1021/jp5026027 ↗
28. Fons · J. Cryst. Growth · 2000 · 209 · 53210.1016/S0022-0248(99)00614-4 ↗
29. Liu · Appl. Surf. Sci. · 2007 · 253 · 372710.1016/j.apsusc.2006.08.012 ↗
30. Liu · J. Alloys Compd. · 2009 · 485 · 52910.1016/j.jallcom.2009.06.019 ↗
31. Geng · J. Phys. Chem. C · 2011 · 115 · 1231710.1021/jp2023567 ↗
32. S. Gasiorowicz , Quantum Physics, John Wiley and Sons, Inc., New York, 1974
33. Hernandez · ACS Appl. Mater. Interfaces · 2014 · 6 · 1215310.1021/am501379m ↗
34. Zhang · ACS Appl. Mater. Interfaces · 2016 · 8 · 190310.1021/acsami.5b10025 ↗
35. Pan · ACS Appl. Mater. Interfaces · 2012 · 4 · 394410.1021/am300772t ↗
36. M. Grundmann , The Physics of Semiconductors: An Introduction including Nanophysics and Applications, Springer, Berlin, 201010.1007/978-3-642-13884-3 ↗
37. G. Grosso and G. P.Parravicini, Solid State Physics, Elsevier, Singapore, 2nd edn, 2013
38. Kun · Sci. China, Ser. A · 1981 · 24 · 106
39. N. F. Mott and R. W.Gurney, Electronic Processes in Ionic Crystals, Oxford Univ., London, 1953
40. Makino · J. Appl. Phys. · 2003 · 93 · 592910.1063/1.1563295 ↗
41. Kernazhitsky · J. Lumin. · 2014 · 146 · 19910.1016/j.jlumin.2013.09.068 ↗
42. Iatsunskyi · J. Phys. Chem. C · 2015 · 119 · 716410.1021/acs.jpcc.5b01670 ↗