journal article·2026

Inverted red quantum dot light-emitting diodes with a dual-layer ZnO electron transport layer

Depeng Li, Jingrui Ma, Xiangwei Qu, Lei Jin, Kai Wang, Xiao Wei Sun

Nanoscale· Volume 18· Issue 4
Publisher page

Abstract

A dual-layer ZnO electron transport layer (ETL) was developed to improve the performance and stability of inverted red quantum dot light-emitting diodes (QLEDs). The design strategically combines a surface-modified ZnO layer at the indium tin oxide (ITO) interface to improve electron injection and an untreated ZnO layer adjacent to the quantum dot (QD) emissive layer to optimize energy level alignment. This dual-layer configuration exhibited a peak external quantum efficiency (EQE) of 20.7% and a luminance 1.59 times higher than that of the single-layer untreated device, while maintaining a comparable turn-on voltage to the treated ZnO device. The dual-layer design also demonstrated enhanced charge dynamics and extended operational stability, attributed to optimized energy level alignment. These findings highlight the effectiveness of dual-layer ZnO ETLs in advancing the efficiency and durability of QLEDs and provide valuable insights for next-generation emissive device development.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Thin-Film Transistor Technologies · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China

Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Southern University of Science and Technology, Shenzhen 518055, China

Funding

National Key Research and Development Program of China · Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting · Science and Technology Planning Project of Shenzhen Municipality · Development and Reform Commission of Shenzhen Municipality · China Postdoctoral Science Foundation

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