Control of the photoluminescence bandwidth of ZnTeSe quantum dots by suppressing the Te cluster effect
Source abstract
Abstract
The spatial confinement of Te to the most localized location was found to be critical for achieving narrow energy transitions in ZnTeSe quantum dots. In this study, the Te cluster effect in ZnTeSe QDs was suppressed through localizing the Te dopant at the center of the QD core, producing photoluminescence (PL) at 531 nm with a bandwidth as narrow as 39 nm and a quantum yield (QY) of 89%. It was confirmed that broader emission was observed when Te was distributed over the entirety or near the surface of ZnTeSe QDs than when it was confined to the center region. This suggests that concentrating Te is beneficial for suppressing the Te clustering effect. These results highlight the importance of precise Te element positioning as a fundamental design strategy for tailoring the optical properties of alloyed ZnTeSe QDs.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
Department of Semiconductor Convergence Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
Funding
Ministry of Trade, Industry and Energy · Korea Institute of Energy Technology Evaluation and Planning
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