Dislocation-enabled plasticity in rutile TiO 2− x at room temperature
Source abstract
Abstract
Ceramics are widely perceived as brittle. Recent research showed that the deformability of brittle ceramics can be improved by introducing defects, e.g., dislocations and stacking faults, into the ceramics using flash sintering. However, many ceramic materials, including TiO2, have limited room-temperature dislocation mobility. In this work, we explored a potential route to toughen ceramic materials by introducing oxygen vacancies into rutile TiO2. Nanoindentation method was employed to investigate the deformation behavior of the oxygen-deficient TiO2-x. Detailed post-deformation transmission electron microscopy analyses revealed a significant increase in dislocation density. The improved fracture toughness is attributed to the abundant dislocation plasticity in reduced TiO2 with abundant oxygen vacancies. This study provides insight into understanding the influence of point defects and dislocations on the deformation behavior of ceramic materials towards the future designs of ductile ceramics at room temperature.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA
U.S. Naval Research Laboratory, Washington, District of Columbia, USA
Funding
Office of Naval Research
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