Gate-defined quantum point contacts in a germanium quantum well
Source abstract
Abstract
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At a zero magnetic field, we observed quantized conductance plateaus in units of 2e2/h. Bias-spectroscopy measurements reveal that the energy spacing between successive one-dimensional subbands ranges from 1.5 to 5 meV as a consequence of the small effective mass of the holes and the narrow gate constrictions. At finite magnetic fields perpendicular to the device plane, the edges of the conductance plateaus get split due to the Zeeman effect and Landé g factors were estimated to be ∼6.6 for the holes in the germanium quantum well. We demonstrate that all quantum point contacts in the same device have comparable performances, indicating a reliable and reproducible device fabrication process. Thus, our work lays a foundation for investigating multiple forefronts of physics in germanium-based quantum devices that require quantum point contacts as building blocks.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Quantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, China
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Beijing Academy of Quantum Information Sciences, Beijing 100193, China
Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 100871, China
Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
Beijing Superstring Academy of Memory Technology, Beijing 100176, China
Funding
National Natural Science Foundation of China
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