Effect of pressure on the thermoelectric performance of monolayer Janus MoSSe materials with different native vacancy defects
Source abstract
Abstract
The presence of vacancy defects in two-dimensional (2D) materials can substantially influence their thermoelectric performance. In this study, we employed first-principles methods combined with the non-equilibrium Green's functional formalisms (NEGF-DFT) to reveal the impact of pressure on the thermoelectric performance of monolayer Janus MoSSe without and with vacancy defects (VS and VSe). The application of pressure can enhance the thermoelectric figure of merit (ZT) of a material without vacancy defects by significantly increasing the power factor (PF), and the ZT can increase by nearly twice at room temperature (300 K). Then, varying pressures exert different influences on the ZT of materials with the two types of vacancy defects. The ZT of the material with VS vacancy defects at room temperature gradually decreases with increasing pressure. This is because pressure not only reduces the PF but also enhances the total thermal conductivity of the material. Lower pressure (0-5 GPa) will lead to a certain increase in the ZT of the material with VSe vacancy defects, while higher pressure (7.5 GPa) will reduce the ZT. The primary factor contributing to the enhancement of the ZT value is the enhancement of PF, whereas the reduction stems from an increase in total thermal conductivity. Our results reveal the relationship between the thermoelectric performance and pressure of monolayer Janus MoSSe without and with vacancy defects.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Advanced Thermoelectric Materials and Devices · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
Beijing Sun Wise Space Technology Ltd, Beijing 100080, China
Funding
National Natural Science Foundation of China · Fundamental Research Funds for the Central Universities
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