Anomalous dewetting growth of Si on Ag(111)
Source abstract
Abstract
We demonstrate the novel growth of silicene grown on Ag(111) using STM and reveal the mechanism with KMC simulation. Our STM study shows that after the complete formation of the first layer of silicene, it is transformed into bulk Si with the reappearance of the bare Ag surface. This dewetting (DW) during the epitaxial growth is an exception in the conventional growth behavior. Our KMC simulation reproduces DW by taking into account the differences in the activation energies of Si atoms on Ag, silicene, and bulk Si. The growth modes change depending on the activation energy of the diffusion, temperature, and deposition rate, highlighting the importance of kinetics in growing metastable 2D materials.
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Research context
OpenAlex topics: Surface and Thin Film Phenomena · nanoparticles nucleation surface interactions · Theoretical and Computational Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrophysics, National Yang-Ming Chiao Tung University, Hsinchu 300, Taiwan
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 304-0044, Japan
Institute for Molecular Science, 38 Nishigo-Naka, Myodaiji, Okazaki 444-8585, Japan
Institute of Engineering Innovation, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
Graduate School of Human and Environmental Studies, Kyoto University, Yoshida, Kyoto 606-8501, Japan
Funding
Japan Society for the Promotion of Science
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