journal article·2023Open access

Exploiting flux shadowing for strain and bending engineering in core–shell nanowires

Mahmoud Al Humaidi, Julian Jakob, Ali Al Hassan, Arman Davtyan, Philipp Schroth, Ludwig Feigl, Jesús Herranz, Dmitri Novikov, Lutz Geelhaar, Tilo Baumbach, Ullrich Pietsch

Nanoscale· Volume 15· Issue 5

Abstract

Here we report on the non-uniform shell growth of InxGa1-xAs on the GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with the pitch size (p) ranging from 0.1 μm to 10 μm. Considering the preferable bending direction with respect to the MBE cells as well as the layout of the substrate pattern, we were able to modify the strain distribution along the NW growth axis and the subsequent bending profile. For NW arrays with a high number density, the obtained bending profile of the NWs is composed of straight (barely-strained) and bent (strained) segments with different lengths which depend on the pitch size. A precise control of the bent and straight NW segment length provides a method to design NW based devices with length selective strain distribution.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Nanowire Synthesis and Applications · Anodic Oxide Films and Nanostructures · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße 12, D-76131 Karlsruhe, Germany

Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany

Solid State Physics, Emmy-Noether Campus, Walter-Flex Straße 3, D-57068 Siegen, Germany

Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany

Deutsches Elektronen-Synchrotron, PETRA III, D-22607 Hamburg, Germany

Funding

Bundesministerium für Bildung und Forschung

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