Microstructure-regulated inverted pyramidal Si photocathodes for efficient hydrogen generation
Source abstract
Abstract
Black silicon electrodes with inverted pyramid arrays (SiIPs) are promising for efficient photoelectrochemical water splitting due to their excellent photoelectric properties and quasi-hydrophilicity. In this work, an elaborate study on microstructure regulation of SiIP photocathodes is reported. We find that on SiIPs where sidewalls have been processed with copper-assisted chemical etching (Cu-ACE), there are vast numbers of micro-pits distributed (deep holes and shallow grooves) that exactly determine electrode performance, which is a result of homogeneous Cu2+ oxidation of Si. Furthermore, SiIP microstructural features can be effectively adjusted via controlling the etchant composition and introducing alkali post-treatment. Taking the trade-off between light trapping ability and charge separation capacity into consideration, we optimized the hydrogen evolution reaction (HER) activity of a SiIP photocathode, and its onset potential was decreased to -0.35 V vs. RHE. On this basis, we constructed reliable heterojunctions to further improve the sluggish HER kinetics. The optimized SiIPs/TiO2/MoSx cathode exhibits a considerable photocurrent density of 9.45 mA cm-2 at zero HER overpotential for 18 h in acidic media. Notably, our work presents a detailed physical insight into micro-pit formation and elimination in Cu-ACE, and describes the dependency of SiIP-based electrode performance on the microstructure morphology, paving a new way for its potential application in unbiased overall water splitting.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Photocathodes and Microchannel Plates · solar cell performance optimization · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Research and Development Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Funding
National Natural Science Foundation of China
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